等离子体噻吩聚合膜的研究及I^+注入的掺杂效应  

INVESTIGATION OF THE PLASMA-POLYMERIZED THIOPHENE FILM AND THE DOPING EFFECT WITH I+ IMPLANTATION

作　　者：童志深[1] 吴美珍[1] 张铮扬[1] 浦天舒[1] 金若鹏[1] 张菁[1] 朱福英[2] 曹德新[2] 曹建清[2] 朱德彰[2] 

机构地区：[1]中国纺织大学基础部,上海200051 [2]中国科学院上海原子核研究所,上海201800

出　　处：《物理学报》1996年第3期455-463,共9页Acta Physica Sinica

基　　金：中国科学院上海原子核研究所核分析技术研究实验室资助

摘　　要：以噻吩为单体,在等离子体环境中聚合成致密的有机膜。利用Rutherford背散射(RB2S)和质子弹性反冲(ERD)、傅里叶红外谱(FTIR)测定了膜的成分和结构;从近红外-可见-紫外光的反射和透射谱,运用传递矩阵方法研究了膜的光学性质;此外,还探讨了24keV的I^+离子束的注入对等离子体噻吩聚合膜的掺杂效应。结果表明,注入层内电荷载流子的输运机理可用Mott的可变自由程跳跃(VRH)理论给以解释。Plasma-Polymerized organic film starting from thiophene has been prepared. The elemental composition of pristine film was determined by elastic recoil detection (ERD) and Rutherford backscattering spectrum (RBS). FT-IR technique has been used to characterize the sample film. From the near-IR to UV reflectance and transmittance data, we calculated the optical constants of the film, N(ω) = n + ik ,by using the transfer matrix method. In view of the calculations, we investigated the optical properties of the pristine in detail. Moreover, the doping effect in the plasma-polymerized thiophene film with 24 keV I+ implantation has been also explored. The result shows that the transport process of charge carrier in bombarded layer can be interpreted by Mott's VRH model.

关 键 词：噻吩 聚合膜 薄膜 

分 类 号：O484.1[理学—固体物理]