新型选择性复位CMOS图像传感器电路结构  

Novel selective reset CMOS image sensor circuit structure

作　　者：周津[1] 姚素英[1] 徐江涛[1] 胡燕翔[1] 

机构地区：[1]天津大学电子信息工程学院ASIC设计中心,天津300072

出　　处：《吉林大学学报（工学版）》2006年第2期227-231,共5页Journal of Jilin University:Engineering and Technology Edition

基　　金：国家自然科学基金资助项目(60576025);天津市科技攻关计划项目(033183911)

摘　　要：采用数字处理和重构的方法,实现了一种新型选择性复位像素结构及其像素阵列的设计,扩展了CMOS图像传感器(CIS)的动态范围。该方法在像素积分过程中,通过在3个不同的设定时刻比较光电二极管电压值与阈值电压,进行有选择性的复位,得到最终的电压值后,再将其与阈值电压进行重构,从而输出最终的像素值。整个系统的动态范围扩展至107.4dB,提高了成像质量。重构电路由数字电路实现,在保证速度的前提下,减少了处理单元的存储器需要。With digital processing and reconstruction, an improved selective reset pixel structure and a design of pixel array to extend the dynamic range of CMOS image sensor （CIS） was achieved. During pixel integration, comparisons were made between the photodiode voltage and threshold voltages at 3 specific moments for confirming the selective reset. The final photodiode value was reconstructed by threshold value to produce the pixel result. The whole system enhances dynamic range to 107.4 dB and upgrades the image quality. The reconstruction circuit was realized by the digital circuit, ensured the high speed and reduced memory requirement by processing unit.

关 键 词：电子技术 CMOS图像传感器 动态范围 选择性复位 阈值比较 数字重构 

分 类 号：TN403[电子电信—微电子学与固体电子学]