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机构地区:[1]中国科学院电子学研究所传感技术国家重点实验室,北京100080 [2]中国科学院电子学研究所微波成像技术国家重点实验室,北京100080
出 处:《Journal of Semiconductors》2006年第2期309-312,共4页半导体学报(英文版)
摘 要:This paper reports a contact cantilever MEMS switch. The designed switch has a metal cantilever that acts as an electrostatically activated switch with processing options to achieve dielectric isolation of the controlvoltage path from the signal path. To obtain good material properties,an ANSYS FEA tool is used to optimize the structure. The RF MEMS switch is fabricated via a surface micromachining process. The switch has an actuation voltage of 12V,which is close to the simulated value of 11V. The measured and the HFSS simulated isolations are both higher than - 20dB from 0.05 to 10GHz. The measured insertion loss is less than - 0.9dB, relatively larger than the simulated loss of less than - 0.2dB from 0.05 to 10GHz. This is because a contact resistance introduced due to poor physical contact between the bottom lines and the metal cantilever.研究了一种直接接触悬臂梁式RF—MEMS开关,悬臂梁采用Al金属材料.开关通过静电控制,且与信号通道分离.为了优化材料结构和获得好的性能,进行了有限元ANSYS模拟.采用表面微加工工艺来制作开关,获得满意结果.器件的驱动电压为12V,与ANSYS模拟结果11V基本相符;器件的隔离度,在0.05-10GHz的范围内,实验测试与HFSS模拟的结果基本一致,都优于-20dB;器件的插入损耗,HFSS模拟小于-0.2dB,而实验测试小于-0.9dB,偏高是由于悬臂梁表面不平,导致接触电阻增大,在测试中引入接触阻抗所致.
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