Nafion修饰玻碳电极伏安法测定痕量铟  

Voltammetric determination of In(Ⅲ) using a Nafion modified glassy carbon electrode

作　　者：向翠丽[1] 费锡明[1] 李俊华[1] 邹勇进[1] 

机构地区：[1]华中师范大学化学学院,武汉430079

出　　处：《分析试验室》2006年第2期19-21,共3页Chinese Journal of Analysis Laboratory

摘　　要：报道了一种用Nafion修饰玻碳电极测定痕量铟的新方法.研究了Na-fion膜的有关特性和测定的条件,当富集时间为5 min时,峰电流与In（Ⅲ）浓度在1×10^-9～1×10^-7mol/L的范围呈良好的线性关系,检出限为1.46×10^-10mol/L.该法用于实际水样中痕量铟的测定,平均回收率为98.4%.This paper reports an application which a Nation modified glassy carbon electrode is used to determine trace Indium by Voltammetry. The experimental conditions have been optimized. The peak current is proportional to the concentration of Indium in the range of 1 × 10^-9 - 1 × 10^-7 mol/L, and the limit of detection is 1.46 × 10^-10 mol/L. The method has been applied to the determination of Indium in water samples and the average recovery is 98.4 %.

关 键 词：NAFION修饰电极 伏安法 铟 

分 类 号：O657.1[理学—分析化学]