PFN充电高压电源的IGBT驱动电路设计  

Design of IGBT Driver in High Voltage PFN Charging Power Supply

作　　者：丛晓艳[1] 尚雷[1] 陆业明[1] 

机构地区：[1]中国科学技术大学国家同步辐射实验室,合肥230029

出　　处：《高电压技术》2006年第2期78-80,共3页High Voltage Engineering

基　　金：国家自然科学基金面上项目(10475073)

摘　　要：介绍了用于速调管调制器逆变恒流高压充电电源的IGBT驱动电路设计,以及IGBT驱动器2SD315A模块的原理和保护电路设计方法,并进行了实验,给出了有关的实验波形。实验结果表明合理地计算选择电路参数,驱动电路具有可靠的过流保护功能。The IGBT controlled by voltage needs high peak current to charge the capacitor of grid in order to gain short rise time and fall time to reduce the on-off waste. The design of an IGBT driver in high voltage, constant-current, charging power supply used in klystron modulator is introduced. The internal structure and the over-current protection scheme of the IGBT driver 2SD315A are described. Protel 99 is used to draw the schematics and make a PCB board to do experiments. It shows that the driver has reliably protective functions when parameters are appropriately chosen. Finally some waveforms are presented.

关 键 词：速调管调制器 高压充电电源 IGBT 驱动 过流保护 

分 类 号：TL503.5[核科学技术—核技术及应用]