SiO_x(X≤2)基电致发光体系研究进展  

Development on SiO_x(X≤2)-Based Electroluminescence System

作　　者：张文彬[1] 张开坚[1] 李新军[2] 何明兴[1] 

机构地区：[1]攀枝花钢铁研究院,四川攀枝花617000 [2]中国科学院广州能源研究所,广州510640

出　　处：《科技导报》2006年第2期13-18,共6页Science & Technology Review

基　　金：广东省自然科学重点基金资助项目(010873;32708)

摘　　要：近年来,SiOx(X≤2)基电致发光材料发展迅速。着重讨论了5种具有实用潜力Si基LED包括离子掺杂、Si-nc嵌SiO2、多孔硅、a-Si(C):H以及MOS结构,并对其电致发光机理以及存在的问题如量子效率低、稳定性差进行了分析,认为电致发光原子SiOx(X≤2)中发光中心和界面缺陷处载流子的辐射复合。在激子碰撞和电子空穴复合发光体系中,提高载流子的平衡注入能够显著提高量子效率。在对比SiOx(X≤2)基LED研究的基础上,对下一步发展提出了建议。SiOx （X ≤2）-based electroluminescence material has rapidly developed recently, thus it is necessary to review practical Si-based light emitting devices consisting of ion-doped SiOx, Si-nanocrystal implanted SiO2, porous silicon, hydrogen amorphous Si（C） and MOS structures in this paper. On the basis of these, electroluminescent mechanism has been discussed and at the same time some problems such as low quantum efficiency and poor stability have been clarified that carrier balance injection is must, in the electroluminescent system with impaction of excitons and recombination of cartier, to improve quantum efficiency. Finally development on SiOx （X ≤2）-based LED are suggested.

关 键 词：氧化硅 电致发光 掺杂 量子效率 载流子 

分 类 号：O613.72[理学—无机化学]