InSb晶体表面碟形坑缺陷  

Saucer Pit Defects on InSb Surfaces

作　　者：杜红燕[1] 王淑艳[1] 张钢[1] 刘理天[2] 

机构地区：[1]华北光电技术研究所,北京100015 [2]清华大学微电子所,北京100084

出　　处：《激光与红外》2006年第1期26-28,共3页Laser & Infrared

摘　　要：文章用金相显微镜观察、统计了InSb晶片扩散前、后,经择优腐蚀后呈碟形坑的表面微缺陷。结果显示这类缺陷的一部分是InSb晶体原生缺陷,一部分由扩散诱生。分析后认为由扩散诱生这类缺陷的原因主要为晶片表面粘污,已证实清洗更洁净的晶片,能有效抑制扩散过程中诱生的这类缺陷。Microdefects in the InSb wafer surface which appear as saucer pits by a preferential etching are observed and counted before or after diffusion by means of microscope. The result shows that some of the defects are native to the starting material, some of the defects are induced by diffusion. It is found that the reason induced the defects by diffusion is contamination in the InSb wafer surface. It is showed that the defects induced by diffusion are suppressed in the. clean InSb wafer surface.

关 键 词：INSB 碟形坑缺陷 扩散 

分 类 号：TN304.23[电子电信—物理电子学] O483[理学—固体物理]