CMOS带隙基准电压源中的曲率校正方法  

Design Considerations of Recent CurvatureCorrected CMOS Bandgap Reference

作　　者：史侃俊[1] 许维胜[1] 余有灵[1] 

机构地区：[1]同济大学,上海200092

出　　处：《现代电子技术》2006年第5期113-116,共4页Modern Electronics Technique

摘　　要：基准电压源是集成电路系统中一个非常重要的构成单元。结合近年来的设计经验,首先给出了带隙基准源曲率产生的主要原因,而后介绍了在高性能CMOS带隙基准电压源中所广泛采用的几种曲率校正方法。给出并分析了一些近年来采用曲率校正方法的CMOS带隙基准电压源核心电路以及他们的设计原理、理论推导、参考电路和特点。最后,对于所讨论的基准源电路进行了性能比较和优缺点分析。Voltage reference is one of the most important IC cells. The main reason that produces the curvature is introduced and the design considerations of recent curvature-corrected CMOS bandgap references are discussed in this paper. Some rencently reported core circuits of CMOS bandgap references with curvature-correction are included and analyzed, with regard to the design principles, theoretical derivation, reference circuits and features. Moreover,a comparison is made on performances of mentioned circuits.

关 键 词：CMOS 带隙基准源 曲率校正 集成电路 

分 类 号：TN432[电子电信—微电子学与固体电子学]