室温红外探测薄膜电阻温度系数测试技术  

Test of Temperature Coefficient of Resistance for Room Temperature IR Detection Thin Film

作　　者：赵凯生[1] 刘爽[1] 龙再川[2] 杜昊[1] 冯林[1] 

机构地区：[1]电子科技大学光电信息学院,四川成都610054 [2]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2006年第1期49-51,共3页Semiconductor Optoelectronics

基　　金：电子科技大学青年科技基金资助项目

摘　　要：薄膜电阻温度系数的准确测定对红外探测薄膜材料的研究有着十分重要的意义。研究了薄膜电阻温度系数实时测试技术,重点考虑微弱信号放大和噪声有效抑制,实现了微小间隔下对温度和电阻同时采集,以及数据的精确处理。采用该测试系统准确地测试出几种常用红外探测薄膜材料的电阻温度系数。Accuarte test of temperature coefficient of resistance（TCR） is very important to research IR detection thin film materials. The real time testing technique of TCR is investigated, which mainly focused attentron on consideration of the amplication of feeble signals and the naise supression. This testing technique not on lyrealized the acquisition of resistance and temperature at the same time in micro-interval,but realized the precise data processing. The IR detection thin film materials＇ TCR with different ingredient were measured precisely.

关 键 词：室温红外探测 薄膜 电阻温度系数 测试技术 

分 类 号：TN214[电子电信—物理电子学]