薄膜非晶/微晶叠层电池中NP隧穿结的影响  

Effect of NP Tunnel on Thin Film a-Si/μc-Si Tandem Solar Cells

作　　者：朱锋[1,2] 赵颖[1,2] 魏长春[1,2] 任慧智[1,2] 薛俊明[1,2] 张晓丹[1,2] 高艳涛[1,2] 张德坤[1,2] 孙建[1,2] 耿新华[1,2] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所 [2]南开大学光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室,天津300071

出　　处：《人工晶体学报》2006年第1期81-84,共4页Journal of Synthetic Crystals

基　　金：国家科技部重大基础研究项目(G2000028203;G2000028202);教育部重点项目(No.02167)资助

摘　　要：本文论述了薄膜非晶/微晶叠层电池中NP隧穿结对电池性能的影响。在薄膜叠层电池中非晶顶电池的N层采用微晶硅,减小了电池的内部串联电阻影响。通过调整非晶硅顶电池N层和微晶硅底电池P层的厚度,降低NP隧穿结的影响,获得薄膜叠层电池效率11.73%(Voc=1.34V,Jsc=14.53mA/cm2,FF=60.27%),电池面积为0.253 cm2。The effect of NP tunnel on thin film a-Si/μc-Si tandem solar cells is described in this paper. In thin film tandem solar cells, the n layer of amorphous solar cell was a microcrystalline silicon, which decreased the effect of interior series resistance. The thicknesses of n layer and p layer were adjusted, so that the effect of NP tunnel on thin film tandem solar cells was decreased. The conversion of tandem solar cell was 11.73% （ Voc = 1.34V, Jsc = 14.53mA/cm^2, FF = 60.27% ） and the solar cell size was 0.253cm^2.

关 键 词：非晶/微晶叠层电池 微晶硅 N/P隧穿结 

分 类 号：O782[理学—晶体学]