一种GaAs FET/pHEMT器件噪声参数测量的新方法  

A New Noise Parameter Measurement Method for GaAs FET/pHEMT Devices

作　　者：刘章文[1] 蒋毅[1] 古天祥[1] 

机构地区：[1]电子科技大学自动化工程学院

出　　处：《电子学报》2006年第2期352-355,共4页Acta Electronica Sinica

基　　金：中国工程物理研究院科学技术研究基金(No.20040433)

摘　　要：本文提出一种FET/pHEMT器件噪声参数提取的新方法.该方法利用50Ω输入阻抗噪声系数F50的测量,通过本征H参数和本征级联噪声矩阵CAINT,确定出关于门噪声温度Tg和漏噪声温度Td的线性方程.后对所有频点的线性方程Tg-Td作统计分析,即可确定Tg和Td.再由噪声网络合成原理求得总的级联噪声相关矩阵CA,相应的噪声参数(Fm in,Rn和Γopt)也求出来了.三个FET/pHEMT器件的测量结果显示出,实测参数与Garcia和Lázaro的方法吻合得很好.A new method for measuring the noise parameters of a FET/pHEMT device is proposed. By measuring the matched （50Ω） noise figure F50, based on the intrinsic H-parameters and the intrinsic chain noise matrix CA^INT, the linear equation of the gate noise temperature Tg and drain noise temperature Td is obtained. The statistic analysis of the Tg-Td figure is performed at all frequencies range, and then the measured noise temperatures Tg and Td are determined. In terms of noise network synthesis theory, the full chain noise matrix CA is computed, and the corresponding noise parameters （ Fmin,Rn and Гopt） are determined. The measurements for three FET/pHEMT devices show that the results are perfectly in accordance with these by means of Garcia and Lázaro.

关 键 词：噪声测量 FET 本征H参数 级联噪声矩阵 

分 类 号：TN406[电子电信—微电子学与固体电子学]