一种失调电压补偿电容比例型带隙基准源设计  

Design of An Offset Voltage Compensation Ratio-Capacitance Bandgap Voltage Reference

作　　者：何菁岚[1] 李强[1] 韩益峰[1] 闵昊[1] 

机构地区：[1]复旦大学专用集成电路与系统国家重点实验室,上海200433

出　　处：《复旦学报（自然科学版）》2006年第1期30-33,共4页Journal of Fudan University：Natural Science

基　　金：国家"八六三"计划资助项目(2003AA1Z1280)

摘　　要：设计了一种全新的电容比例型带隙基准源,用电容比例取代了通常的电阻比例,有效地减小了电路设计误差以及电路的功耗,理论失调电压可获补偿.电路采用Cadence Spectre软件仿真,Charter 0.35μm CMOS工艺库实现.仿真结果表明,该电路具有极低的电路功耗(8μW),其直流电源抑制比PSRR达到50 dB,温度系数为3×10-5V/℃.A new structure of bandgap voltage reference with ratio-capacitance is proposed, which effectively improves the precision, reduces the power consumption of the circuit and compensates the offset voltage. The bandgap voltage reference is implemented in charter 0.35μm CMOS technology. Simulation shows that the features of the reference operating at an input voltage of 2 V include a very low power consumption of 8 μW, a temperature coefficient of 3 × 10^-5 V/C and a DC power supply rejection ratio （PSRR） of 50 dB.

关 键 词：集成电路 CMOS 带隙基准源 电容比例 低功耗 

分 类 号：TN402[电子电信—微电子学与固体电子学] TN431.1