流体静压力下Hg_(1-x)Cd_xTe p-n结的伏安特性  

Current-Voltage Characteristics of Hg_(1-x)Cd_xTe p-n Junctions under Hydrostatic Pressure

作　　者：李齐光[1] 姜山[1] 袁皓心 陈泉森[1] 沈学础[1] 

机构地区：[1]中国科学院上海技术物理研究所红外物理开放研究实验室

出　　处：《Journal of Semiconductors》1990年第1期68-71,共4页半导体学报（英文版）

摘　　要：在77K和室温下,研究了Hg_(1-x)Cd_xTe(x=0.5)p—n结伏安特性随流体静压力的变化,从中得到了禁带宽度E_g的压力系数。结果表明,在低压范围(0<P<1.0GPa),E_g随压力线性增加,而在室温高压范围(P>1.4GPa),E_g～P关系明显偏离线性。实验还观察到,在正、反向小偏压区域,I—V特性随压力的变化呈现“反常”行为。The hydrostatic pressure dependence of the current-voltage characteristics of Hg_(1-x)Cd_xTep-n junctions with x=0.5 has been studied at room temperature and 77K.The pressure coefficientof the energy gap Eg was obtained.It is found that Eg increases linearly with pressure inthe low pressure range 0<P<1.0GPa.However,in the high pressure range (P>1.4Pa) atroom temperature, Eg versus pressure deviates from this linearity remarkably. It is als observedthat, in the small forward and reverse bias region,the pressure dependence of the I-V characteristicsexhibits an 'anomalous' bchavior.

关 键 词：HGCDTE P-N结 流体静压力 伏安特性 

分 类 号：TN304.26[电子电信—物理电子学]