射频溅射CoMnNiO非晶薄膜中空穴的迁移率  

Mobility of Holes in CoMnNiO Amorphous Film Deposited by R. F. Sputtering

作　　者：陶明德[1] 谭辉[1] 秦东 韩英[1] 

机构地区：[1]中国科学院新疆物理所

出　　处：《Journal of Semiconductors》1990年第10期786-789,共4页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：测量薄膜的热电动势,很容易确定薄膜中载流子的迁移率。本研究根据CoMnNiO非晶薄膜在200—350K温区的热电动势测量和直流电导,计算了薄膜中空穴的迁移率。结果表明,330K时,薄膜中空穴的迁移率为1.25cm^2v^(-1)(?)^(-1),且具有热激活性质。由此可以推断,射频溅射CoMnNiO非晶薄膜在常温下发生跳跃导电。The mobility of holes in amorphous CoMnNiO film is calculated from the measurement of do conductivity and thermo-emf of the film in the temperature range of 200-300 K. The results show that the mobility of holes at 330 K is of 1.25cm^2v^(-1)s^(-1)and thermally activated. It is concluded that band tail hopping conduction in amorphous CoMnNiO film will occur at 300 K.

关 键 词：CoMnNio 非晶薄膜 热电动势 迁移率 

分 类 号：TN304.07[电子电信—物理电子学]