异质结绝缘栅场效应晶体管(HIGFETs)高场区静态特性模型和栅泄漏电流研究  

Study of Static Characteristics and Leakage Current in High Field Region of Heterostructure Isolated Gate Field Effect Transistor

作　　者：顾聪[1] 王德宁[1] 王渭源[1] 

机构地区：[1]中国科学院上海冶金研究所

出　　处：《Journal of Semiconductors》1990年第12期922-930,共9页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：本文在改进型电荷控制模型基础上,结合GSW速度场特性,提出了适用于HIGFETs器件的新的高场区(I_D>I_(Ds))的静态特性模型,从而导出了I-V,I_(Ds)-V_(Ds),g_(ms),g_D和C_G等参数的解析表示式。计算结果和文献实测值符合甚好。在此基础上,本文还提出了栅泄漏等效电路模型,对其起因和影响因素,及其对g_(ms),g_D及C_G的影响,以及降低其影响的途径等进行了讨论。计算结果与实测值也较符合。Based on the improved charge control model, combinating GSW velocity vs field relation,the analytic formulas of the static characteristics, such as I-V, I_Ds-V_(DS), transconductance G_(ms)conductance g_D and the gate capacitance Co in the new high field region (I_D> l_(DS)) areobtained. The theoretical results are in good agreement with the experimental data. On this basis,an equivalent circuit model of the gate leakage current is developed. The cause of the gateleakage current, its influence on g_(ms),g_D and C_G, and the way of lowering the gate leakage currentare also discussed.

关 键 词：HIGFETS 静态模型 栅泄漏电流 

分 类 号：TN386.6[电子电信—物理电子学]