高Q　Ba(Zn_(1/3)Ta_(2/3))O_3介质谐振器材料及其在毫米波系统中的应用  

Ba(Zn_(1/3)Ta_(2/3))O_3 High Q Dielectric Resonator Material and Its Applications in Millimeter-wave Systems

作　　者：汤炳谦[1] 

机构地区：[1]南京电子器件研究所

出　　处：《固体电子学研究与进展》1996年第1期48-55,共8页Research & Progress of SSE

摘　　要：叙述了Ｂａ（Ｚｎ１／３Ｔａ２／３）Ｏ３介质谐振器材料的制备、结构、微波性能及典型应用。Ｂａ（Ｚｎ１／３Ｔａ２／３）Ｏ３介质材料介电常数εｒ为２９．５，频率温度系数τ≈０（－５５～＋８５℃），１０ＧＨｚ下最大无载Ｑ值１４７００，在２８ＧＨｚ测得Ｑ值约为４８００。这种材料具有高Ｑ值，特别适用于Ｘ以上波段作为振荡器电路中频率稳定元件。用这种介质谐振器已研制出８ｍｍ介质稳频微带耿氏振荡器，频率稳定度小于１０×１０－６／℃，最大输出功率达１８０ｍＷ。The fabrication, crystal structures,microwave dielectric properties and applications of a Ba(Zn1/3Ta2/3)O3 high Q dielectric resonator material are described in this paper.Ba (Zn1/3Ta2/3)O3 has the characteristics of dielectric constant εr,=29.5,temperature coefficientτf≈0 from-55～＋85℃ and the highest Q factor of 14 700 at 10 GHz and of 4 800 at 28 GHz.As this material has very high Q factor,it is widely applied for frequency stabilizing elements in oscillator circuits at frequencies above 12 GHz.A Ka-band(8 mm) GaAs Gunn microstrip oscillator with the dielectric resonator has frequency stability of 10×10-6/℃ and maximum output power of 180mW.

关 键 词：介质谱振器 毫米波 振荡器 Q值 

分 类 号：TN752.5[电子电信—电路与系统]