p－Si上电沉积Ni－W合金薄膜  

The Electrodeposition of Nickel-Tungsten Films on p-type silicon

作　　者：郭永[1] 张国庆[1] 姚素薇[1] 郭鹤桐[1] 龚正烈[1] 

机构地区：[1]天津大学应用化学系,天津理工学院,山西雁北师范学院

出　　处：《应用化学》1996年第2期11-14,共4页Chinese Journal of Applied Chemistry

基　　金：国家自然科学基金

摘　　要：利用恒电流沉积法，在ｐ－Ｓｉ上制备出不同Ｗ含量和不同结构的Ｎｉ－Ｗ薄膜，研究了镀液温度，ｐＨ值，电流密度对镀层组成的影响，结果表明，提高温度有利于获得高Ｗ含量的合金．随着镀层中Ｗ含量的增加，Ｎｉ面心立方晶格ｆ．ｃ．ｃ发生正畸变，晶粒平均尺寸变小，当Ｗ含量达到５６％以上时，晶粒小于２ｎｍ，薄膜呈非晶态结构．Nickel-tungsten films with different content of W and different structure were prepared by means of galvanostatic electrodeposition. The influence of temperature, pH value and current density on the composition of deposits was investigated. Experimental results showed that a rise in temperature is favorable to the increase of W content. X-ray diffraction was used to determine the film structure. With increase of W content. the f. c. c lattice of nickel is distorted, and the average size of grains becomes smaller. When the content of W in deposits reaches to about 56/00, the size of grains decreases to below 2 nm and the film has an amorphous structure.

关 键 词：电沉积 合金薄膜 镍 钨 非晶态 

分 类 号：TQ153.2[化学工程—电化学工业]