ITO/PTCDA/p-Si薄膜器件的表面和界面特性研究  

Surface and Interface Characteristics of ITO/PTCDA/p-Si Thin Film Devices

作　　者：郑代顺[1] 张旭[2] 钱可元[1] 

机构地区：[1]清华大学深圳研究生院,广东深圳518055 [2]甘肃联合大学数学与信息学院,甘肃兰州730000

出　　处：《光电子．激光》2006年第3期280-284,共5页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(60076023)

摘　　要：界面态对于薄膜器件的性能具有非常重要的影响。有米用真空蒸发和溅射沉积的方法制备了ITO/PTCDA/p-Si薄膜器件,并采用X射线光电子能谱(XPS)和Ar+溅射技术对其表面和界面电子态进行了研究。结果表明,在ITO/PTCDA/p-Si薄膜器件的界面,不仅ITO与PTCDA薄膜之间存在扩散,PTCDA与Si衬底材料之间也存在扩散现象。此外,每种原子的XPS谱表现出一定的化学位移,并以C1s和O1s谱的化学位移最为显著。Interface characteristics have a very important influence on the performance of thin film devices. ITO/PTCDA/p-Si thin film device was fabricated with vacuum evaporation and sputter deposition method. The surface and interface electron states of ITO/PTC- DA/p-Si were investigated using X-ray photoelectron spectroscopy（XPS） and argon ion beam etch technology. Results indicate that at the interface of ITO/PTCDA/p-Si,diffusion occurs between not only ITO and PTCDA films but also PTCDA and Si substrate. Moreover,chemical shifts exist in the XPS spectra of each atom,and the chemical shifts of Cls and Ols are most remarkable.

关 键 词：表面和界面特性 X射线光电于能谱(XPS) 化学位移 ITO/PTCDA/p-Si 

分 类 号：TN383.1[电子电信—物理电子学]