Implant Depth Influence on InGaAsP/InP Double Quantum Well Intermixing Induced by Phosphorus Ion Implantation  

作　　者：赵杰 陈杰 王永晨 韩德俊 

机构地区：[1]College of Physics and Electronic Information Science, Tianjin Normal University, Tianjin 300074 [2]Key Laboratory for Radiation Beam and Materials Modification (Ministry of Education), Beijing Normal University, Beijing 100875

出　　处：《Chinese Physics Letters》2006年第4期919-921,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 60276013, and the Fund of Key Laboratory for Radiation Beam and Materials Modification, Beijing Normal University.

摘　　要：We investigate quantum well intermixing of a double-quantum-well structure caused by phosphorus ion implantation by means of photoluminescence （PL）. The ion implantation is performed at the energy of 120keV with the dose ranging from 1 × 10^11 to 1 × 10^14/cm^2. The rapid thermal annealing is performed at the temperature of 700℃ for 30s under pure nitrogen protection. The PL measurement shows that the band gap blueshift is influenced by the depth of ion implantation. The blueshift of the upper well which is closer to the implanted wcancies is enhanced with the ion dose faster than that from a lower well under the lower dose implantation （〈 5 × 10^11/cm^2）. When the ion dose is over 10^12/cm^2, the band gap blueshift from both the wells increases with the ion dose and finally the two peaks combine together as one peak, indicating that the ion implantation results in a total intermixing of both the quantum wells.We investigate quantum well intermixing of a double-quantum-well structure caused by phosphorus ion implantation by means of photoluminescence （PL）. The ion implantation is performed at the energy of 120keV with the dose ranging from 1 × 10^11 to 1 × 10^14/cm^2. The rapid thermal annealing is performed at the temperature of 700℃ for 30s under pure nitrogen protection. The PL measurement shows that the band gap blueshift is influenced by the depth of ion implantation. The blueshift of the upper well which is closer to the implanted wcancies is enhanced with the ion dose faster than that from a lower well under the lower dose implantation （〈 5 × 10^11/cm^2）. When the ion dose is over 10^12/cm^2, the band gap blueshift from both the wells increases with the ion dose and finally the two peaks combine together as one peak, indicating that the ion implantation results in a total intermixing of both the quantum wells.

关 键 词：LASER STRUCTURES PHOTOLUMINESCENCE FABRICATION 

分 类 号：O413.1[理学—理论物理]