双频段接收机中的BiFET低噪声放大器(英文)  

BiFET Low Noise Amplifier for Dual Band RF Receiver

作　　者：金玮[1] 许永生[1] 石春琦[1] 陶永刚[1] 俞惠[1] 李勇[1] 赖宗声[1] 

机构地区：[1]华东师范大学微电子电路与系统研究所,上海200062

出　　处：《电子器件》2006年第1期37-40,共4页Chinese Journal of Electron Devices

基　　金：上海科学与技术委员会资助(03706210&AM0308)

摘　　要：设计了一种采用BiFET结构的低噪声放大器(LNA),这种结构通过BiCMOS工艺使低噪声放大电路集合了双极型晶体管的低噪声特性和CMOS晶体管的高线性度。应用优化的BiFETCascode共源共栅结构能够明显地提高低噪声放大器的性能,并且能应用于两个不同频率。本文设计的低噪声放大器在低偏置电流(1.7mA)和低功耗(5.7mW)的情况下能取得1.69dB的噪声系数、15.96dB的电压增益、-8.5dBm的IIP3和-67dB的反向隔离。设计的BiFET低噪声放大器是采用了AMS0.8μm的BiCMOS混合信号工艺,经过优化可以用于工业、室内的远程无线控制系统包括无线门禁系统。This work describes a RF low noise amplifier （LNA） with a BiFET configuration, which merges the advantages of the low noise of the bipolar devices with the high linearity of the MOS devices together by the BiMOS process. By using the optimum architecture to the cascode topology, this configuration can obviously improve the LNA＇s performance and can operate at two different frequencies. The low current （1. 7mA） and low power consumption （5. 7 mW） is achieved with a low noise figure （1.69 dB）, a 15. 9 dB voltage gain,-8. 5 dBm IIP3 and -67 dB reverse isolation operating in ISM band. The BiFET LNA which targets in the AMS BiCMOS 0. 8μm, mixed-signal process has been optimized for a low power RF receiver used in the applications of general domestic and industrial remote control including keyless entry.

关 键 词：低噪声放大器 身频芯片 BiFET结构 双频段接收机 ISM频段 

分 类 号：TN722.2[电子电信—电路与系统]