硅基RF无源低通滤波器设计与实现  

Design and Realization of Si-Based RF Passive Low-Pass Filter

作　　者：李小进[1] 石艳玲[1] 游淑珍[1] 赖宗声[1] 

机构地区：[1]华东师范大学电子系,上海200062

出　　处：《电子器件》2006年第1期88-91,共4页Chinese Journal of Electron Devices

基　　金：上海应用材料研究与发展基金等项目的资助(0103)

摘　　要：无源滤波器具有功耗小、面积小,噪声小的特点,优于传统的有源滤波器,而研制高品质因子的电感和电容是研制片上无源滤波器的一个难点。文中讨论了影响电感Q值提高的因素,并将结构参数优化应用于无源滤波器的设计中。根据网络综合法设计出了一个三阶,-3dB截止频率为900MHz的低通无源滤波器,其器件参数C1,L1,C2分别为5.434pF13.252nH和5.434pF,采用ADS软件对该滤波器进行了版图参数优化设计,依据优化设计结果制备了试验样品,经测试获得了较好的工作特性。Because of lower power, lower area and lower noise, passive filter is better than active filter. But fabricating high factor is the necklace of the fabricating passive filter on chips. This paper provides the design methods of the microwave passive low-pass filter. A three-order low-pass filter has been designed using the design method which is studied. The transformation from the schematic-level to layout-level is completed using the software which is compiled by the author. C1 ,L1 ,C2 are 5. 434 6 pF, 13. 252 nH and 5. 434 6 pF. The filter has a corner frequency of 900MHz where the attenuation is-3 dB. Simulation has been done in layout level using the software ADS. At last this paper simulates the filter using the Aglient software ADS. According to the simulation result the filter designed has been realized, the S-parameter shows that the sample has good working characteristic.

关 键 词：无源低通滤波器 射频 结构参数 ADS 

分 类 号：TN405[电子电信—微电子学与固体电子学]