Influence of Polarization-Induced Electric Fields on Optical Properties of Intersubband Transitions in Al_xGa_(1-x)N/GaN Double Quantum Wells  

极化电场对Al_xGa_(1-x)N/GaN双量子阱中子带间跃迁的光学性质的影响(英文)

作　　者：雷双英[1] 沈波[1] 许福军[1] 杨志坚[1] 徐柯[1] 张国义[1] 

机构地区：[1]北京大学物理系人工微结构和介观物理国家重点实验室,北京100871

出　　处：《Journal of Semiconductors》2006年第3期403-408,共6页半导体学报（英文版）

基　　金：国家高技术研究发展计划(批准号:2002AA305304) ;国家自然科学基金(批准号:60325413,60136020,60444007);国家重点基础研究发展规划(批准号:G20000683);教育部博士点基金(批准号:20020284023)资助项目~~

摘　　要：The influence of polarization-induced electric fields on the electron distribution and the optical properties of intersubband transitions （ISBT） in AlxGa（1-x）N/GaN coupled double quantum wells （DQWs） is investigated by self-consistent calculation. It is found that the polarization-induced potential drop leads to an asymmetric potential profile of AlxGa（1-x）N/GaN DQWs even though the two wells have the same width and depth. The polarization effects result in a very large Stark shift between the odd and even order subbands,thus shortening the wavelength of the ISBT between the first odd order and the second even order （1odd-2 ） subbands. Meanwhile, the electron distribution becomes asymmetric due to the polarization effects, and the absorption coefficient of the 1odd-2 ISBT decreases with increasing polarization field discontinuity.用自洽计算的方法研究了极化电场对Al_xGa_(1-x)N/GaN双量子阱中子带间跃迁的光学性质和电子分布的影响.发现极化场会导致电压降的出现,从而使得结构对称的Al_xGa_(1-x)N/GaN双量子阱具有不对称的导带和价带.极化效应还会使奇数序和偶数序的子带之间发生很大的Stark平移,从而使第一奇数序和第二偶数序子带之间的跃迁波长变短,这将有利于实现工作在通信窗口的光电子器件.同时,由于导带分布的不对称性,电子分布也不对称,从而会影响吸收系数.

关 键 词：AlxGa（1-x）N／GaN DQWs intersubband transition polarization field discontinuity 

分 类 号：TN304[电子电信—物理电子学]