An Improved Angle Polishing Method for Measuring Subsurface Damage in Silicon Wafers  

一种改进的测量硅片亚表面损伤的角度抛光方法(英文)

作　　者：霍凤伟[1] 康仁科[1] 郭东明[1] 赵福令[1] 金洙吉[1] 

机构地区：[1]大连理工大学精密与特种加工教育部重点实验室,大连116024

出　　处：《Journal of Semiconductors》2006年第3期506-510,共5页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:50390061);国家杰出青年科学基金(批准号:50325518)资助项目~~

摘　　要：We present an improved angle polishing method in which the end of the cover slice near the glue layer is beveled into a thin,defect-free wedge,the straight edge of which is used as the datum for measuring the depth of subsurface damage. The bevel angle can be calculated from the interference fringes formed in the wedge. The minimum depth of the subsurface damage that can be measured by this method is a few hundred nanometers. Our results show that the method is straightforward, accurate, and convenient.提出了一种改进的角度抛光方法来测量硅片的亚表面损伤.其原理是:经过研磨和化学机械抛光后,起保护作用的陪片靠近胶黏剂的一端形成一个无损伤的、完整的劈尖,劈尖的棱边作为测量亚表面损伤的基准;角度抛光的倾斜角可通过劈尖上面产生的干涉条纹准确地测量得到.采用这种方法可以方便、准确地测量硅片由切割、研磨和磨削引起的亚表面损伤,其能够测量的最小损伤深度为几百纳米.

关 键 词：silicon wafer subsurface damage angle polishing defect etching wedge fringes 

分 类 号：TN304[电子电信—物理电子学]