具有微小栅极孔径的场发射阴极的模拟  

Simulation of Field Emission Cathode with Micro-Gate-Hole

作　　者：宋翠华[1] 刘爱青[1] 郭大勃[1] 元光[1] 

机构地区：[1]中国海洋大学信息科学与工程学院物理系,山东青岛266071

出　　处：《真空电子技术》2006年第1期54-57,共4页Vacuum Electronics

摘　　要：利用有限元方法计算了具有微小栅极孔径的Spindt结构场发射阴极在不同栅极形状、孔径、电压下的电场分布和电子轨迹,并根据电子运动轨迹计算了场发射电子束的发散角和发射效率。计算结果表明微小栅极孔径可以有效减小场发射电子束的发散,同时通过调整栅极的形状可以获得较高的场发射效率。In this paper, the electric field distribution and the electron trajectory of the Spindt-type emitter with small size of gate-hole, including their dependence on the gate shape, hole size and bias were calculated by finite element method. The scattering angle of the emitted electron can be reduced significantly when the gate hole is smaller than 50 nm, and a high efficiency of field electron emission could be achieved by optimizing the shape of gate hole.

关 键 词：场发射 发散角 发射效率 有限元方法 

分 类 号：O462[理学—电子物理学]