C60势垒二极管  

C60 Barrier Diodes

作　　者：贾鹤群[1] 黄子强[1] 

机构地区：[1]电子科技大学光电信息学院,四川成都610054

出　　处：《现代显示》2006年第4期53-58,共6页Advanced Display

摘　　要：本文探讨将C60富勒烯材料作为有源矩阵液晶显示的开关元件。首先介绍了Lechner二极管有源矩阵液晶显示的原理。之后介绍了本文制作的C60二极管的工艺流程及其性能。将C60薄膜淀积在Al上,制成Al/C60结构的薄膜二极管。对Al/C60的肖特基结构与MIS结构的电学特性做了研究。Al/C60肖特基结构在偏压±2V时的整流比为30,而MIS结构在偏压±2V时整流比为100。在MIS结构中,AlOx的形成起着关键的作用。研究还发现,刚淀积好的薄膜二极管,其整流效应并不理想,在真空中经退火处理后,其性能得到增强。最后探讨了如何将C60势垒二极管与Lechner二极管有源矩阵液晶显示进行结合。In this paper we discuss using C60 diodes as the switch elements in AM-LCD. First we introduce principle of Lechner diodes AM-LCD. Then we introduce the fabrication technology and performance of our C60 diodes. Al/C60 film diodes have been fabricated by depositing solid C60 on Al films, and their electrical properties of Schottky structure and MIS structure were measured. The rectification ratio of Schottky structure is 30, while that of MIS structure is 100 at ± 2V bias voltage. The formation of AlOx plays an important role in MIS structure. We also found that the as-prepared diodes show poor performance. However, a high performance can be gained after heat treatment in vacuum. At last, we discuss how to combine C60 diodes and Lechner diodes AM-LCD.

关 键 词：有源矩阵液晶显示 Lechner二极管 C60薄膜 

分 类 号：TN141[电子电信—物理电子学]