二氧化钛压敏电阻势垒高度的测定  

Barrier Height Measurement of Titania Varistor Ceramics

作　　者：孟凡明[1] 

机构地区：[1]安徽大学信息材料与器件重点实验室,安徽合肥230039

出　　处：《电子元件与材料》2006年第4期57-58,共2页Electronic Components And Materials

基　　金：安徽省教育厅科研基金资助项目(2005KJ224);安徽大学教学研究基金资助项目(X200521);安徽大学信息材料与器件重点实验室基金资助项目

摘　　要：按配方TiO2+0.3%(SrCO3+Bi2O3+SiO2)+0.075%Ta2O5,以典型的陶瓷工艺制备样品。通过I-T和I-V测量,将压敏电阻视为双向导通的二极管,应用半导体理论对低压下的I-V数据进行处理,测定了TiO2-SrCO3-Bi2O3-SiO2-Ta2O5压敏陶瓷的势垒高度?b为0.43eV。Sample was prepared by the typical ceramics technics with the formula of TIO2＋0.3% （in mole fraction, the same below）（SiCO3＋Bi2O3＋SiO2）＋0.075%Ta2O5. Based on the results of measurements of electric current-temperature and electric current-voltage, the semiconductor theory about the conduction of zener diode was appled to the TiO2-SrCO3-Bi2O3-SiO2-Ta2O5 varistor ceramics since it is analogous to two back to back diodes. The I-V characteristic was measured at the low voltage region. The value of the barrier height （φ0=0.43 eV） was determined by the intercept of the InJs-E^1/2 plot.

关 键 词：材料检测与分析技术 二氧化钛 压敏陶瓷 势垒高度 热发射 

分 类 号：TN304[电子电信—物理电子学] TN379