单晶铜线材在制备过程中的晶粒演化  

Crystal Evolution of Single Crystal Copper Wire in Manufacturing Process

作　　者：张战英[1] 李炳[1] 王鑫[1] 范新会[1] 严文[1] 

机构地区：[1]西安工业学院材料化工学院,西安710032

出　　处：《西安工业学院学报》2006年第1期68-71,75,共5页Journal of Xi'an Institute of Technology

基　　金：国家自然科学基金(59971033);陕西省自然科学基金(2003E101)

摘　　要：采用了热型连续铸造方法,选用相同的工艺参数制备出不同直径的铜线材,用光学显微镜分析了线材晶粒形成及生长过程.结果表明:在一定的牵引速度下,纯铜线材晶粒生长的特征是从引晶开始阶段的等轴多晶体渐渐演化为柱状多晶体,最终形成单晶体;随着线材直径的增大,起始晶粒个数在增加;生长成单晶的时间也在增加,经X射线衍射和透射电镜分析能够确定,单晶铜线材晶体择优生长方向为<100>.Single crystal copper wires with different diameter have been produced by O. C. C method with same working condition. Crystal form and growth of the wires have been observed with optic microscope. The results indicate that grade crystals form and grow up at begining, afterwards grade crystals envolve into pillar crystal,single crystals have formed at last. As the diameter is increased,the number of start crystals and time of forming single crystal is also increase. Optimal growth direction of copper single crystal is along 〈100〉.

关 键 词：热型连铸 单晶铜线材 晶粒演化 生长方向 

分 类 号：TG249.7[金属学及工艺—铸造]