强磁场下Sn-3Ag-0.5Cu/Cu界面金属间化合物生长行为  

Growth behavior of intermetallic compound layer at Sn-3Ag-0.5Cu/Cu interface under high magnetic field

作　　者：赵杰[1] 朱凤[1] 尹德国[1] 王来[1] 

机构地区：[1]大连理工大学材料科学与工程学院,辽宁大连116024

出　　处：《大连理工大学学报》2006年第2期202-206,共5页Journal of Dalian University of Technology

基　　金：国家自然科学基金资助项目(50471068)

摘　　要：研究了3 T和8 T强磁场作用下Sn-3A g-0.5Cu/Cu焊接接头界面金属间化合物在170℃时效过程中的生长行为.结果表明:强磁场作用下界面金属间化合物层的厚度随着时效时间的延长而增加,且呈抛物线规律;随着磁场强度的增大,Sn-3A g-0.5Cu/Cu界面金属间化合物的生长速度加快.分析认为强磁场的存在加快了原子的运动,提高了原子的扩散系数,从而加快了界面金属间化合物层的生长速度.The growth behavior of intermetallic compound （IMC） at Sn-3Ag-0. 5Cu/Cu interface has been investigated under high magnetic field of 3 T and 8 T at 170 ℃. The results indicate that the IMC thickness of the Sn-3Ag-0. 5Cu/Cu joints increases with the prolonging of the aging time under the action of high magnetic field. The growth rate follows a parabolic rate law at that magnetic field. However, the growth rate of IMC layer increases with the increase of higher magnetic field. It is assumed that the high magnetic field accelerates the movement of atoms, improves the diffusion coefficient and thus enhances the growth rate of IMC layer.

关 键 词：金属间化合物层 强磁场 抛物线规律 生长速率 

分 类 号：TG425.1[金属学及工艺—焊接]