电子俘获光存储材料BaLiF_3:Eu^(2+)的光激励发光及光存储性质研究  

Photostimulated Luminescence and Optical Storage of BaLiF_3:Eu^(2+)

作　　者：王欣姿[1] 王永生[1] 孙力[1] 徐征[1] 

机构地区：[1]发光与光信息技术教育部重点实验室,北京交通大学光电子技术研究所,北京100044

出　　处：《光谱学与光谱分析》2006年第3期399-402,共4页Spectroscopy and Spectral Analysis

基　　金：国家自然科学基金(10274001);教育部重点(重大)项目资助

摘　　要：利用高温固相反应法制备了混晶状的BaLiF3Eu2+样品。其紫外光激发的发射峰与光激励发光峰均在410nm处,属于Eu2+的5d—4f跃迁发光。光激励峰位于660nm,因而可以配用简单廉价的氦氖激光器。根据光谱特征给出了光激励发光的简单机理。测量了该材料光激励发光衰减性能,结果表明BaLiF3Eu2+存储的信息可以方便地擦除掉。该材料具有优良的光激励发光特性,是一类很有发展前途的电子俘获光存储材料。BaLiF3 ：Eu^2＋ was prepared by high temperature solid state reaction. The peaks of photoluminescence spectrum and photostimulated 1 （PSL） spectrum are both at 410 um which are attributed to the 5d-4f emission of Eu^2＋. The photostimulated luminescence excitation spectrum has its maximum at about 660 nm. Therefore, He-Ne laser is suitable for the reading-out process. The mechanism of PSL was also studied according to the characters of the spectra in the present paper. The PSL decay property of the glass ceramics was investigated, and it was shown that the storage information is easy to be erased. BaLiF3：Eu^2＋ has good properties of PSL and a promising future.

关 键 词：电子俘获 光激励发光 光存储 

分 类 号：TQ594[化学工程—精细化工]