光致变色多阶游程光存储研究  

Study of multi-level run-length limited photo-chromic storage

作　　者：胡恒[1] 潘龙法[1] 齐国生[1] 胡华[1] 徐端颐[1] 

机构地区：[1]清华大学精密仪器与机械学系光盘国家工程研究中心,北京100084

出　　处：《物理学报》2006年第4期1759-1763,共5页Acta Physica Sinica

基　　金：国家重点基础研究发展规划(批准号:G19990330);国家自然科学基金(批准号:60577035)资助的课题.

摘　　要：多阶游程存储是一种不改变光学系统而显著提高光存储容量和数据传输率的新方法.介绍了光致变色多阶游程存储原理和实验系统.提出了基于光致变色原理的多阶游程存储数学模型,该模型反映了记录符反射率与曝光功率、曝光时间之间的非线性关系,并在此基础上确定了光致变色多阶游程存储的写策略.基于650nm光致变色材料进行了4阶游程存储的动态实验.结果表明,实验中采用的650nm光致变色材料可用于多阶游程存储,采用的写策略能够有效地使记录信道线性化,利于采用适合线性系统的信号处理方法.Multi-level run-length limited （ML-RLL） storage is a novel method to increase the recording density and data transfer rate without making changes on optical pickup head. The storage mechanism and experimental system of ML-RLL photo-chromic storage are presented. The mathematical model of ML-RLL storage using photo-chromic materials is proposed. The nonlinear relation between the reflectivity of marks and the exposure power and time is reflected in this model. Based on the model, a proper write strategy used for 4-level run-length limited （4L-RLL） photo-chromic storage is obtained. Then a 4L-RLL photochromic dynamic experiment is carried out on 650 nm photo-chromic material. Experimental results show that the 650 nm photochromic materials used in the experiment can be used for ML-RLL storage and the recording channel can be effectively linearized by using proper write strategy, so the conventional signal processing techniques used for linear system can be used.

关 键 词：多阶游程 光致变色 光存储 写策略 

分 类 号：TP333.4[自动化与计算机技术—计算机系统结构]