Ti_(1-x)(Hf_(0·919)Zr_(0·08))_xNiSn的制备及热电性能  

Preparation and thermoelectric properties of Ti_(1-x)(Hf_(0·919)Zr_(0·08))_xNiSn

作　　者：刘海强[1] 唐新峰[1] 王焜[1] 宋晨[1] 张清杰[1] 

机构地区：[1]武汉理工大学材料复合新技术国家重点实验室,武汉430070

出　　处：《物理学报》2006年第4期2003-2007,共5页Acta Physica Sinica

基　　金：国家自然科学基金重大国际合作项目(批准号:50310353)资助的课题.

摘　　要：采用固相反应法合成了单相的Ti_(1-x)(Hf_(0·919)Zr_(0·08))_xNiSn(x=0·00—0·15),并用放电等离子烧结方法制备出密实块体材料.研究了Hf和Zr同时在Ti位上的等电子合金化对Ti基半Heusler化合物热电性能的影响规律.结果表明:少量的Hf和微量的Zr在Ti位上的等电子合金化,显著地降低了体系的热导率κ,同时显著地提高了体系的Seebeck系数α.组成为Ti_(1-x)(Hf_(0·919)Zr_(0·08))_(0.15)NiSn的试样室温热导率为3·72W·m-1K-1,在700K时ZT值达到最大为0·56.与三元TiNiSn相比,在相同温度下ZT值的提高率为190%—310%.Single-phaseTi1-x（Hf0.919Zr0.081）x NiSn （x = 0. 00-0 .15 ） compounds were synthesized by solid-state reaction and high- density polycrystalline bulk material was prepared by spark plasma sintering （SPS）. The effect of Hf and Zr substitution for Ti on the thermoelectric properties of TiNiSn half-Heusler compounds were investigated. It was shown that the substitution of a small amount Hf and trace Zr for Ti resulted in significant reduction of the thermal conductivity and remarkable enhancement of the Seebeek coefficient. As a result, the dimensionless figure of merit ZT of Ti0.85 （Hf0.919Zr0.081 ）0.15 NiSn reached a high maximum value of 0.56 at 700 K and the enhancement of ZT was 190%-310% at the same temperature compared with ternary TiNiSn compounds.

关 键 词：半Heusler 固相反应 热电性能 Ti1-x(Hf0.919Zr0.081)xNiSn 

分 类 号：TB34[一般工业技术—材料科学与工程]