聚吡咯纳米阵列电极的光电化学  

Photoeletrochemical Behavior of Polypyrrole Nanofiber Array Electrodes

作　　者：刘玲[1] 赵尧敏[1] 杨洁[1] 赵崇军[1] 江志裕[1] 

机构地区：[1]复旦大学化学系分子催化和创新材料上海重点实验室,上海200433

出　　处：《物理化学学报》2006年第3期261-264,共4页Acta Physico-Chimica Sinica

基　　金：国家自然科学基金(20333040);复旦大学研究生创新基金资助项目

摘　　要：以多孔的铝阳极氧化膜(AAO)为模板制备了直径约为80nm聚吡咯(PPy)纳米线的阵列电极,并研究了它的光电化学响应.结果表明,在电极电位低于-0.1V(vsAg/AgCl)时出现的阴极光电流是由聚吡咯纳米线的p型半导体性质引起的,其平带电位为-0.217V.聚吡咯纳米线的长度对光电流的影响较大,最佳长度为42nm.这是因为在很短的聚吡咯纳米线阵列中PPy太少,产生的光电流弱,而在过长的聚吡咯纳米线阵列中光生电子在到达电极基底前易于与光生空穴复合而消失.聚吡咯纳米线有可能作为纳米光电器件用于未来微器件系统.Polypyrrole （PPy） nano-fiber array electrodes were fabricated by electrochemical deposition of PPy in the pores of anodic aluminium oxide （AAO） templates. The photocurrent appeared at the potential below -0.1 V （vs Ag/AgCl） was caused by the p-type semiconductor properties of PPy material. Its flat-band potential Efb was determined as -0.217 V （vs Ag/AgCl）. The photocurrent of PPy nano-fiber array electrode varied with the length of the PPy nanofibers. For very thin PPy nano-fiber array the photocurrent was small. But if the arrays were too thick the photocurrent was also small because the photo-induced electrons might recombine with photo-induced holes in the film before reaching the back contact. The optimum thickness was 42 nm. The PPy nano-fiber devices might be used as nano photo-electronic device in the future.

关 键 词：聚吡咯 阳极氧化铝膜 纳米线阵列 光电化学 

分 类 号：O633.5[理学—高分子化学]