Simulation of multilayer homoepitaxial growth on Cu （100） surface  

作　　者：吴锋民 陆杭军 吴自勤 

机构地区：[1]Institute of Condensed Matter Physics, Zhejiang Normal University, Jinhua 321004, China [2]Department of Astronomy and Applled Physics, University of Science and Technology of China, Hefei 230026, China

出　　处：《Chinese Physics B》2006年第4期807-812,共6页中国物理B（英文版）

基　　金：Project supported by the Natural Science Foundation for Young Scientists of Zhejiang Province, China （Grant No RC02069）.

摘　　要：The processes of multilayer thin Cu films grown on Cu （100） surfaces at elevated temperature （250-400K） are simulated by mean of kinetic Monte Carlo （KMC） method, where the realistic growth model and physical parameters are used. The effects of small island （dimer and trimer） diffusion, edge diffusion along the islands, exchange of the adatom with an atom in the existing island, as well as mass transport between interlayers are included in the simulation model. Emphasis is placed on revealing the influence of the Ehrlic-Schwoebel （ES） barrier on growth mode and morphology during multilayer thin film growth. We present numerical evidence that the ES barrier does exist for the Cu/Cu（100） system and an ES barrier EB 〉 0.125eV is estimated from a comparison of the KMC simulation with the realistic experimental images. The transitions of growth modes with growth conditions and the influence of exchange barrier on growth mode are also investigated.The processes of multilayer thin Cu films grown on Cu （100） surfaces at elevated temperature （250-400K） are simulated by mean of kinetic Monte Carlo （KMC） method, where the realistic growth model and physical parameters are used. The effects of small island （dimer and trimer） diffusion, edge diffusion along the islands, exchange of the adatom with an atom in the existing island, as well as mass transport between interlayers are included in the simulation model. Emphasis is placed on revealing the influence of the Ehrlic-Schwoebel （ES） barrier on growth mode and morphology during multilayer thin film growth. We present numerical evidence that the ES barrier does exist for the Cu/Cu（100） system and an ES barrier EB 〉 0.125eV is estimated from a comparison of the KMC simulation with the realistic experimental images. The transitions of growth modes with growth conditions and the influence of exchange barrier on growth mode are also investigated.

关 键 词：growth mode ES barrier multilayer growth kinetic Monte Carlo simulation 

分 类 号：O78[理学—晶体学]