Semi-quantitative study on the Staebler-Wronski effect of hydrogenated amorphous silicon films prepared with HW-ECR-CVD system  

作　　者：丁毅 刘国汉 陈光华 贺德衍 朱秀红 张文理 田凌 马占杰 

机构地区：[1]School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China [2]The Key Laboratory of Advanced Functional Materials, Ministry of Education of China, Beijing University of Technology, Beijing 100022, China

出　　处：《Chinese Physics B》2006年第4期813-817,共5页中国物理B（英文版）

摘　　要：The method of numerical simulation is used to fit the relationship between the photoconductivity in films and the illumination time. The generation and process rule of kinds of different charged defect states during illumination are revealed. It is found surprisingly that the initial photoconductivity determines directly the total account of photoconductivity degradation of sample.The method of numerical simulation is used to fit the relationship between the photoconductivity in films and the illumination time. The generation and process rule of kinds of different charged defect states during illumination are revealed. It is found surprisingly that the initial photoconductivity determines directly the total account of photoconductivity degradation of sample.

关 键 词：hydrogenated amorphous silicon Staebler-Wronski effect microwave electron cyclotronresonant chemical vapour deposition charged defects 

分 类 号：O484.4[理学—固体物理]