Ultraviolet photovoltaic characteristic of MgB2 thin film  

作　　者：赵嵩卿 周岳亮 赵昆 王淑芳 陈正豪 吕惠宾 金奎娟 程波林 杨国桢 

机构地区：[1]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China

出　　处：《Chinese Physics B》2006年第4期839-841,共3页中国物理B（英文版）

摘　　要：Fast photoelectric effects have been observed in MgB2 thin film fabricated by chemical vapour deposition. The rise time was -10 ns and the full width at half-maximum was -185ns for the photovoltaic pulse when the film was irradiated by a 308 nm laser pulse of 25 ns in duration. X-ray diffraction and the scanning electron microscope revealed that the film was polycrystalline with preferred c-axis orientation. We propose that nonequilibrium electron-hole pairs are excited in the grains and grain boundary regions for MgB2 film under ultraviolet laser and then the built-ln electric field near the grain boundaries separates carriers, which lead to the appearance of an instant photovoltage.Fast photoelectric effects have been observed in MgB2 thin film fabricated by chemical vapour deposition. The rise time was -10 ns and the full width at half-maximum was -185ns for the photovoltaic pulse when the film was irradiated by a 308 nm laser pulse of 25 ns in duration. X-ray diffraction and the scanning electron microscope revealed that the film was polycrystalline with preferred c-axis orientation. We propose that nonequilibrium electron-hole pairs are excited in the grains and grain boundary regions for MgB2 film under ultraviolet laser and then the built-ln electric field near the grain boundaries separates carriers, which lead to the appearance of an instant photovoltage.

关 键 词：MGB2 photovoltaic effect thin film 

分 类 号：O484.4[理学—固体物理]