超深亚微米无负载四管与六管SRAMSNM的对比研究  

Comparative Investigation on VDSM Loadless 4T and 6T SRAM SNM

作　　者：屠睿[1] 刘丽蓓[1] 李晴[1] 邵丙铣[1] 

机构地区：[1]复旦大学国家微分析中心,上海200433

出　　处：《微电子学与计算机》2006年第4期122-127,129,共7页Microelectronics & Computer

摘　　要：采用基于物理的α指数MOSFET模型与低功耗传输域MOSFET模型,推导了新的超深亚微米无负载四管与六管SRAM存储单元静态噪声容限的解析模型,对比分析了由沟道掺杂原子本征涨落引起的相邻MOSFET的阈值电压失配对无负载四管和六管SRAM单元静态噪声容限的影响。New analytical models for VDSM loadless 4T and 6T SRAM cell static noise margin are derived using the physical-based alpha-power law MOSFET model and the low power transregional MOSFET model. The impact of threshold voltage mismatch between adjacent MOSFETs, due to intrinsic fluctuations of dopant atoms in the channel region, is comparatively analyzed on loadless 4T and 6T SRAM cell static noise margin.

关 键 词：SRAM单元稳定性 静态噪声容限 阈值电压失配 

分 类 号：TN432[电子电信—微电子学与固体电子学]