InAlAs量子点材料的AFM和拉曼散射研究  

AFM and Raman Scattering Study of InAlAs Quantum Dots

作　　者：张冠杰[1] 陈涌海[2] 姚江宏[1] 舒强[1] 刘如彬[1] 舒永春[1] 王占国[1] 许京军[1] 

机构地区：[1]天津市南开大学弱光非线性光子学材料先进技术及制备教育部重点实验室,天津300457 [2]中国科学院半导体研究所半导体材料科学重点实验室,北京100083

出　　处：《激光与光电子学进展》2006年第4期68-72,共5页Laser & Optoelectronics Progress

基　　金：国家自然科学基金(No.60476042)资助项目

摘　　要：对分子束外延(MBE)自组织生长的InAlAs量子点材料进行了拉曼散射实验。结合原子力显微镜(AFM)对量子点形貌观察的结果,分析了InAlAs量子点生长过程中尺寸、密度和均匀性的改变,并研究了三维岛的结构对拉曼谱线的影响。对InAlAs淀积厚度不同样品的拉曼谱分析表明,岛状结构的尺寸横纵比与类GaAs LO模和类AlAs LO模的半高全宽有密切关系。不同偏振下的拉曼实验证实了该结构中的光学声子在Z(X,X)(?)偏振条件下为非拉曼活性。Raman scattering investigation of InAlAs/AlGaAs quantum dots （QDs） grown by molecular beam epitaxy （MBE） is reported. The changes of QDs size, density and uniformity in their growing process from the AFM images are analyzed together with the FWHM of Raman peaks. Moreover, the relation between the Raman lines and the structure characteristics of QDs is studied. Comparing those samples with different InAlAs thicknesses, it is found that the width/height ratio has some relation with the widening of GaAs-like LO and AlAs-like LO modes. It also confirms that this kind of phonons is Raman inactive in the Z（X, X）Z polarization.

关 键 词：光电子学与激光技术 量子点 拉曼散射 声子 互混效应 

分 类 号：TN244[电子电信—物理电子学]