自然掺杂及N-Al共掺杂ZnO薄膜的发光特性  

Photoluminescence of ZnO Films Naturally Doped and Codoped with N and Al

作　　者：傅广生[1] 孙伟[1] 吕雪芹[1] 王春生[1] 尹志会[1] 于威[1] 

机构地区：[1]河北大学物理科学与技术学院,河北保定071002

出　　处：《中国激光》2006年第4期549-551,共3页Chinese Journal of Lasers

摘　　要：采用螺旋波等离子体辅助溅射技术制备了自然掺杂及N-Al共掺杂ZnO薄膜,对两种不同类型掺杂薄膜的低温光致发光(PL)特性进行了研究。实验结果表明,二者均呈现出了较强的与受主能级相关的发光特征,自然掺杂薄膜的光致发光谱在404.0 nm处出现了由于锌空位产生的近带边发光,N-Al共掺杂薄膜的光致发光谱在383.0 nm处出现了N作为受主的施主-受主对(DAP)跃迁发光。两种薄膜的发光特性比较分析表明,N-Al共掺杂技术能够有效提高N的固溶度,N受主能级密度增加使薄膜表现出较强的施主-受主对跃迁发光,表明该技术为实现p型ZnO薄膜制备的有效方法。ZnO films naturally doped and codoped with N and Al are deposited by helicon wave plasma assisted sputtering method. Their photoluminescence （PL） properties have been studied at low temperature. Experiments results show that the acceptor-related PL can be observed in the two kinds of films. The near-band-edge emission around 404.0 nm induced by the zinc vacancy is observed in the film naturally doped, whereas the donor-acceptor pair （DAP） transition luminescence around 383. 0 nm in which N acts as the acceptor is observed in the film codoped with N and Al. The comparison between two PL shows that codoped method with N and Al can efficiently improve the dissolvability of N in the films, in which the acceptorrelated levels can be easily introduced and the DAP PL can be observed. It is indicated that codoped with N and Al is an efficient method to produce p-type ZnO films.

关 键 词：薄膜 P型ZnO发光特征 光致发光 掺杂技术 

分 类 号：O484.41[理学—固体物理]