氧化钒薄膜的性能和制备  

Fabrication and Properties of Vanadium Oxide Films

作　　者：晏伯武[1] 

机构地区：[1]黄石理工学院计算机与信息工程系

出　　处：《压电与声光》2006年第2期179-181,184,共4页Piezoelectrics & Acoustooptics

基　　金：国家"八六三"基金资助项目(No.2002AA325080)

摘　　要：为制备低相变温度、高相变特性的氧化钒薄膜,分析了氧化钒的结构,及其结构决定的特有相变,相变前后独特的光电性能及其应用。比较研究了各种制备方法,得到最低相变温度、最高的电阻变化率和电阻温度系数分别达24℃、105-、5.2%K-1,研究表明,掺杂改性及新的成膜工艺的研究是氧化钒薄膜的发展方向。In order to prepare vanadium oxide films with low phase-transition temperature and good phase-transition properties, the paper has analyzed the structures of vanadium oxide, properties of vanadium oxide films which depend on the structures, the photoelectrical properties before and after the phase transition, and its applications. The studies of the variety fabrication methods were emphasized, and the lowest phase transition temperature, the highest resistivity change and the temperature coefficient of resistance（TCR） reached 24 ℃, 10^5 and -5.2% K^-1, respectively. The research shows that the doping and new fabrication techniques are the development direction of vanadium oxide films fabrication.

关 键 词：氧化钒 薄膜 制备 性能 

分 类 号：TN373[电子电信—物理电子学]