微波等离子烧结ZnO/Bi_2O_3系压敏电阻研究  

Study on ZnO/Bi_2O_3 Varistor Sintered by Microwave Plasma

作　　者：禹争光[1] 杨邦朝[2] 

机构地区：[1]中国科学院电工研究所,北京100080 [2]电子科技大学微电子与固体电子学院,四川成都610054

出　　处：《压电与声光》2006年第2期199-201,共3页Piezoelectrics & Acoustooptics

摘　　要：采用常规微波和微波等离子对比烧结ZnO／Bi2O3系压敏电阻发现：两者均可快速成瓷，烧结时间由常规的20h减少到45min；烧结后，ZnO晶粒细小（约1μm）均匀，相比而言，等离子更有利于压敏电阻烧结。45min等离子烧结后，压敏电阻瓷体密度为5．01g／cm^3，ZnO压敏电阻中已有尖晶石相（ZnrSb2O12）生成，烧结时瓷体收缩均匀，漏电流小，但稳定度差。采用“液相掺杂”可以提高压敏电阻在微波等离子烧结后的电性能稳定度，液相加入比例范围为5％～15％。Both conventional microwave and microwave plasma sintering technology have been involved to sinter ZnO based varistor. Varistor with evenly and small-sized ZnO grain （about 1.0μm） was prepared after 45 min microwave sintering, the density of ceramic reached S. 01 g/cms , and spine phase （ZnTSb2O12） could be detected by XRD in the varistor. It was found that microwave plasma was more suitable to sinter ZnO varistor for its easy control during sintering and normal shrinkage in 3-dimension. However, the leakage current of the varistor could be more stable after new doping method-solution doping. And the ratio of solution was about 5%～15 %.

关 键 词：微波等离子 ZNO压敏电阻 烧结 漏电流 

分 类 号：TQ174[化学工程—陶瓷工业]