PMSZT压电陶瓷的制备工艺研究  

Study on Preparation Technique of PMSZT Piezoelectric Ceramics

作　　者：罗云飞[1] 陆翠敏[1] 孙清池[1] 徐明霞[2] 

机构地区：[1]中国电子科技集团公司第十八研究所,天津300381 [2]天津大学材料科学与工程学院,天津300072

出　　处：《压电与声光》2006年第2期212-214,226,共4页Piezoelectrics & Acoustooptics

基　　金：国家自然基金委重点基金资助项目(10232030)

摘　　要：研究了合成工艺、烧结工艺、烧银工艺及极化工艺对PMSZT压电陶瓷相组成、显微结构及电性能的影响。结果表明,PZT压电陶瓷在合成温度为900℃时,可得钙钛矿结构;烧结温度1 240℃时,体积密度最大,综合性能达最佳。烧银温度对陶瓷性能有一定影响。随着烧银温度的升高,介电常数、介电损耗、压电常数和机电耦和系数降低。最佳极化工艺为极化温度120℃,极化电压2 500 V/mm。The influence of calcinating, sintering, Ag-coated, polarizing technique on the crystallographicphase,microstructure and electric-properties have been studied. The results showed that pure perovskitic structure was obtained at calcination of 900 ℃. The maximum density and excellent electro-properties appeared at 1 240℃. With Ag-coated temperature increasing, the dielectric constant, dielectric loss, piezoelectric constant and electromechanical coupling factor decrease, The value of polarization intensity with 2 500 V/ram and polarization temperature with 120 ℃ are the optimum polarizing technique in the PMSZT system.

关 键 词：合成工艺 烧结工艺 烧银工艺 极化工艺 压电陶瓷 

分 类 号：TM282[一般工业技术—材料科学与工程]