基于最优化算法的污秽绝缘子模型计算  

Calculation of Contaminated Insulator Model Based on Optimization Algorithm

作　　者：贺博[1] 林辉[1] 王碧侠[2] 

机构地区：[1]西北工业大学自动化学院,陕西西安710072 [2]西安建筑科技大学,陕西西安710055

出　　处：《高压电器》2006年第2期84-86,共3页High Voltage Apparatus

基　　金：航空基金项目(04F53036)

摘　　要：笔者以有限元分析软件Ansys8．0为工具,讨论了基于最优化算法的污秽绝缘子模型临界条件的计算,包括建模、仿真和计算流程,并对典型实验模型进行了计算。由于该法可以动态地控制寻优范围和叠代步长,所以收敛迅速、结果准确。不仅可以计算简单模型,对于形状不规则或表面污染物分布不均匀的模型也同样适用。与传统的模拟电荷法和电路分析法相比,更加适合于绝缘子闪络特性的仿真和计算。Critical condition is the most contaminated insulator. In this paper, important character of it is discussed in detail that the calculation of critical condition of contaminated insulator based on optimization algorithm, including modeling, simulation and calculation procedure. A typical model has been calculated by a finite-element software. Since this method can adjust parameters range and sub-step size dynamically, it has high accuracy and convergence speed and can be used in dealing with complex object such as the model with uneven dirty distribution or complex shape. Compared with traditional methods,such as charge simulation, circuit analysis, etc., the method is more suitable for simulating and analyzing the flashover character of insulators.

关 键 词：仿真 有限元 最优化 临界条件 

分 类 号：TM216[一般工业技术—材料科学与工程]