OLEDs中CuPc缓冲层作用的AFM与XPS研究  

Function of CuPc buffer layer in OLEDs by AFM and XPS analysis

作　　者：欧谷平[1] 宋珍[2] 桂文明[1] 齐丙丽[1] 王方聪[1] 张福甲[1] 

机构地区：[1]兰州大学物理系,兰州730000 [2]北京机械工业学院基础部,北京100085

出　　处：《功能材料与器件学报》2006年第2期120-124,共5页Journal of Functional Materials and Devices

基　　金：国家自然科学基金项目(60276026);甘肃省自然科学基金项目(ZS031-A25-012-G)

摘　　要：利用AFM对CuPc/ITO样品表面进行扫描,发现其生长较均匀,基本上覆盖了ITO表面的缺陷,且针孔较少。通过样品表面和界面的XPS谱图分析,进一步证实了这一结果,同时发现,CuPc可以抑制ITO中的化学组分向空穴传输层的扩散。有利于器件的性能的改善和寿命的提高。The morphology of CuPc/ITO sample was investigated using Atomic Force Microscopy （AFM）. It is found that CuPc molecules cover the surface defects of ITO and form a uniform film with few pores. The fact is further testified by XPS investigation on the surface and interface of the sample. And it also shows that CuPc film can prevent chemical constituent in ITO diffusing into hole transport layer. The property and life time of OLED devices are improved.

关 键 词：缓冲层CuPc 原子力显微镜(AFM) X射线光电子能谱(XPS) 

分 类 号：TN383.1[电子电信—物理电子学]