Spectral Properties of Fabry-Pérot Laser Diodes and Conventional Semiconductor Optical Amplifiers  

作　　者：CHEN Gen-xiang LI Wei XU Cheng-lin HUANG Wei-ping JIAN Shui-sheng 

机构地区：[1]Key Laboratory of All Optical and Advanced Telecommunication Networks, Beijing Jiaotong University, Beijing 100044, P.R. China [2]Department of Chemical and Engineering Physics, University of Wisconsin-PlatteviUe, Platteville 53818, WI, USA [3]Department of Electrical and Computer Engineering, McMaster University, Hamilton I..8S 4K1, Ontario, Canada

出　　处：《The Journal of China Universities of Posts and Telecommunications》2006年第1期63-66,共4页中国邮电高校学报（英文版）

基　　金：ThisworkissupportedbytheScienceandTechnologyFoundationofBeijingJiaotongUniversity(2005SZ004);NationalNaturalScienceFoundationofChina(60577021,60437010).

摘　　要：This paper presents an unified comprehensive model for the analysis of the spectral properties of Fabry-Perot laser diodes and conventional semiconductor optical amplifiers. We develop the model by considering the wide-band amplified spontaneous emission fields and the input optical signal fields in a general frame. Specifically, this paper discusses theoretical aspects of the model in details, which are based upon the spectra of material gain and spontaneous emission power, nonlinear gain suppression, and longitudinal spatial hole burning. This paper also presents simulation results of the model for the case of conventional semiconductor optical amplifier and the case of Fabry-Perot laser diode to demonstrate its capabilities.This paper presents an unified comprehensive model for the analysis of the spectral properties of Fabry-Perot laser diodes and conventional semiconductor optical amplifiers. We develop the model by considering the wide-band amplified spontaneous emission fields and the input optical signal fields in a general frame. Specifically, this paper discusses theoretical aspects of the model in details, which are based upon the spectra of material gain and spontaneous emission power, nonlinear gain suppression, and longitudinal spatial hole burning. This paper also presents simulation results of the model for the case of conventional semiconductor optical amplifier and the case of Fabry-Perot laser diode to demonstrate its capabilities.

关 键 词：semiconductor optical amplifier laser diode amplified spontaneous emission traveling-wave model 

分 类 号：TN929.11[电子电信—通信与信息系统]