面向高频的GaAs开关电流镜设计  

Study on Digit Signal Process Using Tektronix Digital Storage Oscilloscope

作　　者：李友明[1] 胡惟文[2] 

机构地区：[1]湖南师范大学固定资产管理处,湖南长沙410081 [2]湖南文理学院电子学研究所,湖南常德415000

出　　处：《湖南文理学院学报（自然科学版）》2006年第1期23-25,共3页Journal of Hunan University of Arts and Science(Science and Technology)

基　　金：湖南省教育厅科研项目(05C717)

摘　　要：讨论了采用砷化镓场效应管对改进开关电流电路高频性能作用,采用砷化镓技术设计了电流镜电路,对电路主要的时钟匮入、电荷注入以及输出电导效应造成的误差原理及其补偿进行了分析,提出了一种新的包含共栅级联与虚拟开关技术的电流镜结构,工作频率可达到50MHz.仿真结果证明了电路是有效的.This paper described progress towards high frequency switched-current circuits exploiting GaAs MESFET technologies. In GaAs MESFET technology a new family of switched-current cells was described for radio frequency applications. The main errors of switched-current technique such as clock feedthrough, Charge Injection and high output conductance are analyzed. A novel cascading included dummy switch compensation structure is put forward. The simulation proved the validity.

关 键 词：砷化镓 共栅级联 虚拟开关 

分 类 号：TN911.7[电子电信—通信与信息系统]