O_3有效钝化多孔硅的研究  

Investigation of an Effective Passivation Method for Porous Silicon with the Aid of Ozone Molecules

作　　者：黄燕华[1] 陈松岩[1] 江炳熙[1] 

机构地区：[1]厦门大学物理系,福建厦门361005

出　　处：《光电子．激光》2006年第4期450-454,共5页Journal of Optoelectronics·Laser

摘　　要：开发了用O3氧化钝化多孔Si(PS)的实用工艺方法。O3的基本作用是对Si-Hx和Si悬挂键(DB)的充分氧化,经过随后158 d贮存的老化实验,得到了表面Si-Hx键完全被Si-Ox膜和Si-烷基膜所替代并覆盖的PS,其光致发光(PL)强度达到稳定的增强,这归因于PS纳米晶粒的表面势垒高度的提高以及量子效率的提高。A practical oxidizing technique with 03 has been developed for the passivation of porous silicon （PS）. The fundamental role of ozonization may be attributed to the strong oxidizing process of the Si-Hx species and dangling bonds （DB）. The subsequent 158 d aging effect with the presence of absorbed O3 molecules is much effective for the oxidizing process. At last we achieve a complete replacement of Si-Hx covered with Si-Ox film and Si-alkyl film. The steady increase of photoluminescence （PL） intensity is due to the increase in barrier＇s height efficiency and the increase in quantum efficiency for the nanocrystallites.

关 键 词：多孔Si(PS) 光致发光(PL) 臭氧处理(OT) 傅立叶变换红外吸收谱(FTIR) 

分 类 号：TN305.2[电子电信—物理电子学]