铸造多晶硅晶界的EBSD和EBIC研究  

ELECTRON BACK-SCATTERED DIFFRACTION AND ELECTRON-BEAMINDUCED CURRENT STUDY OF GRAIN BOUNDARIES IN MULTICRYSTALLINE SILICON

作　　者：陈君[1] 杨德仁[1] 席珍强[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《太阳能学报》2006年第4期364-368,共5页Acta Energiae Solaris Sinica

摘　　要：利用电子背散射衍射(electron back-scattered diffraction,EBSD)和电子束诱生电流(electron beam induced cur-rent,EBIC)技术对铸造多晶硅的晶界类型和晶界复合特性进行了研究。EBSD分析显示铸造多晶硅中的大部分晶界为大角度晶界(tθ>10°),且以特殊晶界Σ3和普通晶界为主,同时还存在少量小角度晶界(tθ>10°)。EBIC观察发现洁净晶界(包括大角度和小角度晶界)在300K下的复合能力很弱,晶界类型对其复合特性没有明显影响。洁净的小角度晶界本征上在100K下具有强复合特性,而大角度晶界则不具有;在引入金属沾污后,小角度晶界对金属杂质的吸杂能力最强。小角度晶界的复合特性可能与其界面特殊的位错结构有关。The grain boundary （GB） character and recombination activity of grain boundaries （GBs） in multicrystalline silicon （mc-Si） were studied by means of electron back-scattered diffraction（EBSD） and electron-beam-induced current （EBIC） techniques. EBSD results showed that most GBs in mc-Si were large-angle GBs （θt〉10°）. ∑3 and random GBs were the most frequently observed large angle GBs. Small-angle GBs （θt〉10°） werealso observed with a low ratio. EBIC results revealed that all the GBs in contamination-free mc-Si have weak recombination strength at Z00K and the GB character has no significant effect on it. Small-angle GBs originally have strong recombination strength at 100K while large-angle GBs haven＇ t. Among all GBs, small-angle GBs have the strongest gettering ability of metallic impurities.

关 键 词：铸造多晶硅 电子束背散射衍射 电子束诱生电流 晶界 

分 类 号：TK511[动力工程及工程热物理—热能工程]