开口隔离层上多晶硅薄膜制备  

PREPARATION OF POLYCRYSTALLINE SILICON THIN FILM SOLAR CELLS ON SSP SUBSTRATES WITH PERFORATED INTERMEDIATE SiO_2 LAYER

作　　者：梁宗存[1] 柳锡运[1] 沈辉[2] 

机构地区：[1]中国科学院广州能源研究所,广州510640 [2]中山大学,广州510275

出　　处：《太阳能学报》2006年第4期369-372,共4页Acta Energiae Solaris Sinica

基　　金：国家自然科学基金(50376067);广东省自然基金(04000374)

摘　　要：在SSP硅带衬底上制备开口SiO2隔离层,在隔离层上沉积多晶硅薄膜籽晶层;然后以ZMR将制备的多晶硅薄膜区融、进行再结晶,制备了SSP隔离层上多晶硅薄膜,并制备了多晶硅薄膜电池。研究结果表明:ZMR对籽晶层的区融、结晶效果比较理想,晶粒尺寸增大到厘米级长、毫米级宽;经过晶硅薄膜沉积后,开口隔离层的孔洞未完全被多晶硅薄膜层覆盖住;制备的电池的光特性参数Voc、Isc、FF都比较低,电池的最高转换效率为3.83%;指出了改进的工艺措施。The perforated intermediate SiO2 layer was prepared on SSP substrate, then the seeding layer was deposited and recrystallized by Zone Melting Recrystallisation（ZMR）.The polycrystalline silicon thin fill solar cells were prepared on the seeding layer. Results show that the grain size of polycrystalline silicon thin films increased to several centimeters long and millimeters width after ZMR. The perforated holes are not covered completely with pelycrystalline silicon thin films. The illuminated parameters of solar cells such as FF,Voc and Isc are low; the highest efficiency of the solar cells is 3. 83 %. Improved technologies were pointed out.

关 键 词：多晶硅薄膜电池 颗粒硅带 隔离层 

分 类 号：TK514[动力工程及工程热物理—热能工程]