掺杂物对MgB_2超导电性能影响的研究进展  

Research progress of the effect of adulterant on the superconductivity of MgB_2

作　　者：马红霞[1] 索红莉[1] 王颖[1] 刘敏[1] 周美玲[1] 

机构地区：[1]北京工业大学新型功能材料教育部重点实验室,北京100022

出　　处：《低温与超导》2006年第2期118-122,共5页Cryogenics and Superconductivity

摘　　要：总结了不同掺杂物对MgB2超导电性能影响的研究现状,具体介绍了不同粒度、不同类型的掺杂物对MgB2超导电性的影响。目前的研究结果表明:所有掺杂都降低了MgB2的临界转变温度,而除Cu外的大部分掺杂物都可改善MgB2的不可逆磁场Hirr,提高其临界电流密度Jc;在所有掺杂物中,纳米级S iC掺杂对MgB2的超导电性能改进最大。基于目前的研究现状和结果,最后文中对MgB2超导材料的应用前景进行了展望。The discovery of the superconductor MgB2 with a transition temperature near 40 K has promoted a new interest in the area of fundamental and applied research on superconducting materials. This paper introduces the progress of adulterant research on the superconductivity of MgB,. The effect of different grain size and different type doping on the critical current density of MgB2 is reviewed. According to the different research result, we found all doping procession decrease Te while Most doping leads to improvement of Jc（H） and Hirt performance except Cu. Among all the doping studied so far, nano SiC doping showed the most significant and reproducible enhancement in Jc（H）. On the base of research actuality, at last we reported the prospective applications of the new superconductor MgB2.

关 键 词：MGB2 临界电流密度Jc 不可逆磁场Hirt 纳米掺杂 

分 类 号：TB332[一般工业技术—材料科学与工程] TM26[电气工程—电工理论与新技术]