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作 者:李宏建[1] 欧阳俊[1] 代国章[2] 戴小玉[2] 潘艳芝[2] 谢强[2]
机构地区:[1]中南大学物理科学与技术学院,长沙410083 [2]湖南大学应用物理系,长沙410082
出 处:《Journal of Semiconductors》2006年第4期674-678,共5页半导体学报(英文版)
基 金:湖南省杰出青年科学基金(批准号:03JJY1008);中国博士后科学基金(批准号:2004035083)资助项目~~
摘 要:An expression for energy transfer probability (η) between host (TPD) and guest (Ir(ppy)3) phosphorescent systems is proposed,and the energy transfer process in doped organic electrophosphorescent (EP) devices is discussed. The results show that (1) The rate of the triplet energy transfer (KHG and KGH) exponentially increases with the host-guest molecular distance (R), and KHG decreases quickly as the intermolecular distance of the guest (RGG) increases. In addition,the KHG/KGH ratio of the dopant system increases when R or RGG is reduced; (2) The energy transfer probability approximately linearly decreases as R increases from 0.8 to 1.2nm,and the variation of RGG can be neglected when R〈1.1nm. For 1. 1nm〈R〈l. 2nm, RGG (〈1.6nm) plays an increasingly important role when 71 drops with the latter' (3) η increases when the Forster energy transfer rate increases or Gibb's energy declines.提出了有机掺杂电致磷光器件中主体(TPD)与客体(Ir(ppy)3)间的能量转移几率表达式,并对能量转移过程进行了讨论.结果表明:(1)三态激子能量转移率(KHG,KGH)随主客体分子间距离R指数增加,KHG随客体分子间距离RGG增加有一个快的减少,且KHG/KGH随R或RGG减少而增加;(2)当R为0.8~1.2nm时,能量转移几率接近线性降低,而当R<1.1nm时,RGG的变化能够被忽略,对于1.1nm<R<1.2nm的情况,RGG(<1.6nm)对η起着越来越重要的作用;(3)当Forster能量转移率增加或Gibb’s能减小时,η将会增加.
关 键 词:ELECTROPHOSPHORESCENCE energy transfer probability TRIPLET
分 类 号:TN383.1[电子电信—物理电子学]
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